General description:
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits:
• Very fast switching
• Trench MOSFET technology
• ESD protected
Applications:
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits
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