GENERAL DESCRIPTION：

The W29N01HV (1G-bit) NAND Flash memory provides a storage solution for embedded systems withlimited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storingmedia data such as, voice, video, text and photos. The device operates on a single 2.7V to 3.6V powersupply with active current consumption as low as 25mA 10uA for CMOS standby current.The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes.Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytesfor the main data storage area and 64-bytes for the spare data area (The spare area is typically used forerror management functions). The W29N01HV supports the standard NAND flash memory interface using the multiplexed 8-bit bus totransfer data, addresses, and command instructions. The five control signals, CLE, ALE, #CE, #RE and#WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (WriteProtect) and the RY/#BY (Ready/Busy) for monitoring the device status.

FEATURES：

 Basic Features

– Density : 1Gbit (Single chip solution)

– Vcc : 2.7V to 3.6V

– Bus width : x8

– Operating temperature

 Industrial: -40°C to 85°C

 Single-Level Cell (SLC) technology.

 Organization

– Density: 1G-bit/128M-byte

– Page size

 2,112 bytes (2048 + 64 bytes)

– Block size

 64 pages (128K + 4K bytes)

 Highest Performance

– Read performance (Max.)

 Random read: 25us

 Sequential read cycle: 25ns

– Write Erase performance

 Page program time: 250us(typ.)

 Block erase time: 2ms(typ.)

– Endurance 100,000 Erase/ProgramCycles(1)

– 10-years data retention

 Command set

– Standard NAND command set

– Additional command support

 Copy Back

 Lowest power consumption

– Read: 25mA(typ.3V),

– Program/Erase: 25mA(typ.3V),

– CMOS standby: 10uA(typ.)

 Space Efficient Packaging

– 48-pin standard TSOP1

– 48-ball VFBGA

– 63-ball VFBGA

– Contact Winbond for stackedpackages/KGD