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Nexperia PDTB143ET Datesheet

PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plasticpackage.NPN complement: PDTD143ET.The PDTB143ET from Nexperia is a high-performance P-channel MOSFET optimized for efficient power switching and load control in low-voltage applications. It features low on-resistance (RDS(on)), fast switching capability, and excellent thermal stability. The device is ideal for DC-DC converters, battery management systems, power distribution networks, and general-purpose switching applications where high efficiency and reliable operation are required.

General description:

PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plasticpackage.NPN complement: PDTD143ET

Features and benefits:

• 500 mA output current capability

• Built-in bias resistors

• Simplifies circuit design

• Reduces component count

• ±10 % resistor ratio tolerance

• High temperature applications up to 175 °C

• AEC-Q101 qualified

Applications:

• Cost-saving alternative for BC807 series in digital applications

• Control of IC inputs

• Switching loads


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