General description:
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadlessultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.
Features and benefits:
Very fast switching
Trench MOSFET technology
Small and leadless ultra thin SMDplastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellentthermal conduction
Applications:
Charging switch for portable devices
DC/DC converters
Small brushless DC motor drive
Power management in battery-drivenportables
Hard disc and computing powermanagement
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