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Micron MT41K256M16TW-107:P Datesheet

The Micron MT41K256M16TW-107:P is a high-performance DDR3L SDRAM (Double Data Rate 3 Low Voltage) memory component . It operates at a nominal voltage of 1.35V, offering lower power consumption compared to standard DDR3, while maintaining backward compatibility with 1.5V systems. This device has a density of 4Gbit and is organized as 256 Meg x 16 bits . It features a 16-bit data bus width and supports data transfer rates up to 1866 MT/s with a clock frequency of 933 MHz. The memory utilizes an 8n-prefetch architecture and differential data strobes (DQS, DQS#) for high-speed operation . Housed in a compact 96-ball FBGA package (8mm x 14mm), it is ideal for space-constrained applications requiring high bandwidth and low power, such as servers, networking equipment, and computing platforms.

Description:

DDR3L SDRAM (1.35V) is a low voltage version of theDDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM(Die Rev :E) data sheet specifications when running in1.5V compatible mode.

Features:

• VDD = VDDQ = 1.35V (1.283–1.45V)

• Backward compatible to VDD = VDDQ = 1.5V ±0.075V– Supports DDR3L devices to be backward compatible in 1.5V applications

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT)for data, strobe, and mask signals

• Programmable CAS (READ) latency (CL)

• Programmable posted CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4(via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• TC of 105°C– 64ms, 8192-cycle refresh up to 85°C– 32ms, 8192-cycle refresh at >85°C to 95°C– 16ms, 8192-cycle refresh at >95°C to 105°C

• Self refresh temperature (SRT)

• Automatic self refresh (ASR)

• Write leveling

• Multipurpose register

• Output driver calibration


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