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Micron MT40A512M16TB-062E:R Datesheet

The Micron MT40A512M16TB-062E:R is a high-speed DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) component, organized as 512 Meg x 16 bits for a total density of 8 Gigabits . It utilizes an 8n-prefetch architecture to achieve high-speed operation, with an interface designed to transfer two data words per clock cycle at the I/O pins . Operating from a single 1.2V ± 6% power supply (VDD = VDDQ = 1.14V to 1.26V), it offers a balance of high bandwidth and low power consumption. This device has a maximum clock frequency of 1.6 GHz (data rate of 3200 MT/s) and is internally configured as an eight-bank DRAM for the x16 configuration. Housed in a compact 96-ball FBGA package (7.5mm x 13mm), it is designed for surface-mount assembly . This specific part number (with the ":R" suffix) is specified for operation over the commercial temperature range of 0°C to 95°C.

Overview:

The Micron MT40A512M16TB-062E:R is a high-speed DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) component, organized as 512 Meg x 16 bits for a total density of 8 Gigabits . It utilizes an 8n-prefetch architecture to achieve high-speed operation, with an interface designed to transfer two data words per clock cycle at the I/O pins . Operating from a single 1.2V ± 6% power supply (VDD = VDDQ = 1.14V to 1.26V), it offers a balance of high bandwidth and low power consumption. This device has a maximum clock frequency of 1.6 GHz (data rate of 3200 MT/s) and is internally configured as an eight-bank DRAM for the x16 configuration. Housed in a compact 96-ball FBGA package (7.5mm x 13mm), it is designed for surface-mount assembly . This specific part number (with the ":R" suffix) is specified for operation over the commercial temperature range of 0°C to 95°C.

Features:

High-Speed DDR4 Architecture: 8n-bit prefetch architecture, with data transfer rates up to 3200 MT/s (1.6 GHz clock) .

Memory Organization: 512 Meg x 16 configuration .

Supply Voltage: VDD = VDDQ = 1.2V ± 60mV (1.14V to 1.26V), supporting lower power consumption .

Operating Temperature: Commercial temperature range of 0°C to 95°C (Tc) . 

Package: 96-ball FBGA (Fine-Pitch Ball Grid Array) package, measuring 7.5mm x 13mm .

Interface: Parallel memory interface with an access time of 19 ns.

Key DDR4 Features: Includes data bus inversion (DBI) for data bus, command/address (CA) parity, and data bus write cyclic redundancy check (CRC). Supports write leveling, self-refresh mode, and temperature-controlled refresh .

Reliability: On-die termination (ODT) and output driver calibration capabilities .

Applications

Servers and high-performance computing .

Networking equipment (routers, switches).

Industrial computing and embedded systems.

Telecommunications infrastructure .


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