Description:
This device is an ultrafast diode based on 600 VPt doping planar technology.It can be used in hard switching conditions forpower factor corrections. Its extremely lowreverse recovery current reduces the switchingpower losses of the MOSFET and thus increasesthe overall application efficiency.This diode is also intended for applications inpower supplies and power conversions systems,and all sorts of power switching.
Features:
Ultrafast recovery
Low reverse recovery current
Low thermal resistance
Higher frequency operation
Reduces switching and conduction losses
Insulated TO-220FPAC:
Insulating voltage = 2000 VRMS
Package capacitance = 12 pF
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