GENERAL DESCRIPTIONS:

The W25N01GW (1G-bit) Serial SLC NAND Flash Memory provides a storage solution for systems withlimited space, pins and power. The W25N SpiFlash family incorporates the popular SPI interface and thetraditional large NAND non-volatile memory space. They are ideal for code shadowing to RAM, executingcode directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on a single1.70V to 1.95V power supply with current consumption as low as 25mA active and 10µA for standby. AllW25N SpiFlash family devices are offered in space-saving packages which were impossible to use in thepast for the typical NAND flash memory.The W25N01GW 1G-bit memory array is organized into 65,536 programmable pages of 2,048-bytes each.The entire page can be programmed at one time using the data from the 2,048-Byte internal buffer. Pagescan be erased in groups of 64 (128KB block erase). The W25N01GW has 1,024 erasable blocks.The W25N01GW supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI: Serial Clock,Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to104MHz are supported allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz(104MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O instructions.The W25N01GW provides a new Continuous Read Mode that allows for efficient access to the entirememory array with a single Read command. This feature is ideal for code shadowing applications.A Hold pin, Write Protect pin and programmable write protection, provide further control flexibility.Additionally, the device supports JEDEC standard manufacturer and device ID, one 2,048-Byte Unique IDpage, one 2,048-Byte parameter page and ten 2,048-Byte OTP pages. To provide better NAND flashmemory manageability, user configurable internal ECC, bad block management are also available inW25N01GW.

FEATURES:

 New W25N Family of SpiFlash Memories

– W25N01GW: 1G-bit / 128M-byte

– Standard SPI: CLK, /CS, DI, DO, /WP,/Hold

– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold

– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3

– Compatible SPI serial flash commands

 Highest Performance Serial NAND Flash

– 104MHz Standard/Dual/Quad SPI clocks

– 208/416MHz equivalent Dual/Quad SPI

– 40MB/S continuous data transfer rate

– Fast Program/Erase performance

– More than 100,000 erase/program cycles(4)

– More than 10-year data retention

 Efficient “Continuous Read Mode”(1)

– Alternative method to the Buffer ReadMode

– No need to issue “Page Data Read”between Read commands

– Allows direct read access to the entirearray

 Low Power, Wide Temperature Range

– Single 1.70V to 1.95V supply

– 25mA active, 10µA standby current

– -40°C to +85°C operating range

 Flexible Architecture with 128KB blocks

– Uniform 128K-Byte Block Erase

– Flexible page data load methods

 Advanced Features

– On chip 1-Bit ECC for memory array

– ECC status bits indicate ECC results

– bad block management and LUT(2) access

– Software and Hardware Write-Protect

– Power Supply Lock-Down and OTP protection

– 2KB Unique ID and 2KB parameter pages

– Ten 2KB OTP pages(3)

 Space Efficient Packaging

– 8-pad WSON 8x6-mm

– 16-pin SOIC 300-mil

– 24-ball TFBGA 8x6-mm

– Contact Winbond for other package options