Features:

• Organization:

• Page size:x8: 2,112 bytes (2,048 + 64 bytes)x16: 1,056 words (1,024 + 32 words)

• Block size: 64 pages (128K + 4K bytes)

• Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks;8Gb: 8,192 blocks• Read performance:

• Random read: 25µs

• Sequential read: 30ns (3V x8 only)

• Write performance:

• Page program: 300µs (TYP)

• Block erase: 2ms (TYP)

• Endurance: 100,000 PROGRAM/ERASE cycles

• Data retention: 10 years

• First block (block address 00h) guaranteed to bevalid without ECC (up to 1,000 PROGRAM/ERASEcycles)

• VCC: 2.7V–3.6V

• Automated PROGRAM and ERASE

• Basic NAND command set:

• PAGE READ, RANDOM DATA READ, READ ID,READ STATUS, PROGRAM PAGE, RANDOM DATAINPUT, PROGRAM PAGE CACHE MODE, INTERNAL DATA MOVE, INTERNAL DATA MOVE withRANDOM DATA INPUT, BLOCK ERASE, RESET

• New commands:

• PAGE READ CACHE MODE

• READ UNIQUE ID (contact factory)

• READ ID2 (contact factory)

• Operation status byte provides a software method ofdetecting:

• PROGRAM/ERASE operation completion

• PROGRAM/ERASE pass/fail condition

• Write-protect status

• Ready/busy# (R/B#) pin provides a hardwaremethod of detecting PROGRAM or ERASE cyclecompletion

• PRE pin: prefetch on power up

• WP# pin: hardware write protect