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Micron MT25QU01GBBB8E12-0AAT

The MT25QU01GBBB8E12-0AAT from Micron is a high-density 1Gb serial NOR flash memory device, consisting of two stacked 512Mb die. It features an SPI-compatible serial bus interface supporting both Single Transfer Rate (STR) and Double Transfer Rate (DTR) protocols, with a maximum clock frequency of 166 MHz (STR) and 90 MHz (DTR). Dual/Quad I/O commands enable increased throughput up to 90 MB/s. The device supports Execute-in-Place (XIP), PROGRAM/ERASE SUSPEND operations, and both volatile and nonvolatile configuration settings. It includes 3-byte and 4-byte address modes for memory access beyond 128Mb, a dedicated 64-byte user-lockable OTP area, and comprehensive erase capabilities including die erase, 64KB uniform sector erase, and 4KB/32KB subsector erase. Erase performance is 400 KB/sec for 64KB sectors and 80 KB/sec for 4KB subsectors, with program performance of 2 MB/sec.

Features:

• Stacked device (two 512Mb die)

• SPI-compatible serial bus interface

• Single and double transfer rate (STR/DTR)

• Clock frequency

– 166 MHz (MAX) for all protocols in STR

– 90 MHz (MAX) for all protocols in DTR

• Dual/quad I/O commands for increased throughput up to 90 MB/s

• Supported protocols: Extended, Dual and Quad I/Oboth STR and DTR

• Execute-in-place (XIP)

• PROGRAM/ERASE SUSPEND operations

• Volatile and nonvolatile configuration settings

• Software reset

• Additional reset pin for selected part numbers

• 3-byte and 4-byte address modes 

– enable memoryaccess beyond 128Mb

• Dedicated 64-byte OTP area outside main memory

– Readable and user-lockable

• Erase capability

– Die erase

– Sector erase 64KB uniform granularity

– Subsector erase 4KB, 32KB granularity

• Erase performance: 400KB/sec (64KB sector)

• Erase performance: 80KB/sec (4KB sub-sector)

• Program performance: 2MB/sec

• Security and write protection

– Volatile and nonvolatile locking and softwarewrite protection for each 64KB sector

– Nonvolatile configuration locking

– Password protection

– Hardware write protection: nonvolatile bits(BP[3:0] and TB) define protected area size

– Program/erase protection during power-up

– CRC detects accidental changes to raw data

• Electronic signature

– JEDEC-standard 3-byte signature (BB21h)

– Extended device ID: two additional bytes identifydevice factory options

• JESD47H-compliant

– Minimum 100,000 ERASE cycles per sector

– Data retention: 20 years (TYP)


How to Order

You can get your Micron MT25QU01GBBB8E12-0AAT solution by flling out the form below and we will contact you immediately.

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