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Infineon IR2110STRPBF

The IR2110STRPBF from Infineon is a high voltage, high speed power MOSFET and IGBT driver featuring independent high and low side referenced output channels. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Matched propagation delays simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in high side configuration operating up to 500V (IR2110) or 600V (IR2113).

Description:

The IR2110/IR2113 are high voltage, high speed power MOSFET andIGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enableruggedized monolithic construction. Logic inputs are compatible withstandard CMOS or LSTTL output, down to 3.3V logic. The outputdrivers feature a high pulse current buffer stage designed for minimumdriver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. Thefloating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration whichoperates up to 500 or 600 volts.

Features:

• Floating channel designed for bootstrap operationFully operational to +500V or +600VTolerant to negative transient voltagedV/dt immune

• Gate drive supply range from 10 to 20V

• Undervoltage lockout for both channels

• 3.3V logic compatibleSeparate logic supply range from 3.3V to 20VLogic and power ground ±5V offset

• CMOS Schmitt-triggered inputs with pull-down

• Cycle by cycle edge-triggered shutdown logic

• Matched propagation delay for both channels

• Outputs in phase with inputs


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