GENERAL DESCRIPTION:

The HMC1082CHIP is a gallium arsenide (GaAs), monolithicmicrowave integrated circuit (MMIC), pseudomorphic highelectron mobility transistor (pHEMT), driver amplifier thatoperates from 5.5 GHz to 18 GHz. The HMC1082CHIP providesa typical gain of 24 dB, 36 dBm output IP3, and 25.5 dBm ofoutput power for 1 dB compression, requiring only 220 mAfrom a 5 V supply voltage. The saturated output power (PSAT)is 26 dBm with 24% power added efficiency (PAE).The HMC1082CHIP is an ideal driver amplifier for a wide rangeof applications including point to point radios from 5.5 GHz to18 GHz and marine radars at 9 GHz. The HMC1082CHIP canalso be used for 6 GHz to 18 GHz EW and ECM applications.

FEATURES:

High saturated output power: 26 dBm with 24% PAE

High gain: 24 dB typical

High output IP3: 36 dBm typical

High output P1dB: 25.5 dBm

Die size: 2.19 mm × 1.05 × 0.1 mm

APPLICATIONS:

Software defined radios

Electronics warfare (EW)

Radar applications

Electronic countermeasures (ECMs)