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GigaDevice GD5F1GM9UE Datesheet

The GigaDevice GD5F1GM9UE is a 1Gb NAND Flash memory device designed for reliable data storage in embedded systems, consumer electronics, and industrial applications. Featuring high endurance, fast read/write performance, and low power consumption, it is ideal for applications requiring compact and efficient non-volatile memory. Its advanced architecture ensures stability and durability, making it suitable for smartphones, IoT devices, automotive systems, and other memory-intensive products.

Description:

GigaDevice's 24nm process SLC NAND products, with core capacities of 1Gb, 2Gb, 4Gb, and 8Gb, offer two series: traditional parallel interfaces and the new SPI serial interface. They have been successfully mass-produced. In response to the problems encountered during the operation of NAND Flash, GigaDevice manages, detects and corrects errors by adopting the 8-bit ECC algorithm, providing high performance and security features, and is committed to serving 5G, Internet of Things, network communication, security, and consumer application scenarios including wearable devices. Provide large-capacity solutions with cost advantages.

◆ Supports two supply voltages: 1.8V and 3V

◆ Support random reading of 2K-Byte/4K-Byte Cache space

The programming/erasing cycle reaches 80,000 times, and the data retention time is 10 years

The Parallel NAND interface supports x8 and is compatible with ONFI1.0

The SPI NAND interface supports x1/x2/x4/x4 DTR

◆ SPI NAND additionally supports functions such as Internal ECC, Continuous Read, and Deep Power Down

◆ Supports industrial grade/automotive grade -40℃ to 85℃/-40℃ to 105℃

Performance parameters:

Status: S

Voltage: 2.7V to 3.6V

Capacity: 1Gb

I/O bus: x1; x2; x4;

Frequency: 166MHz

Page size: 2KB

ECC requirement: ECC-free

Main features :DTR; Continues Read; Bad Block Management

Package :WSON8 8x6mm; WSON8 6x5mm; TFBGA24 8x6mm (5x5 ball array)

Temperature :-40℃ to 85℃ - 40 ℃ ~ 105 ℃


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