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Infineon Technologies TDA21590

The TDA21590 integrated power-stage contains a low quiescent current synchronous buck gate-driver IC which is co-packed with control and synchronous MOSFETs along with an active diode structure that achieves low Vsd similar to a schottky with very little reverse recovery charge. The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch node ringing when layout guidelines are followed.The paired gate driver and MOSFET combination enables higher efficiency at lower output voltages required by cutting edge CPU, GPU and DDR memory designs.

Description:

• High frequency, low profile DC-DC converters;

• Voltage Regulators for CPUs, GPUs and DDR memory arrays;

• Telecom controlled and uncontrolled

The TDA21590 integrated power-stage contains a low quiescent current synchronous buck gate-driver IC which isco-packed with control and synchronous MOSFETs along with an active diode structure that achieves low Vsdsimilar to a schottky with very little reverse recovery charge. The package is optimized for PCB layout, heattransfer, driver/MOSFET control timing, and minimal switch node ringing when layout guidelines are followed.The paired gate driver and MOSFET combination enables higher efficiency at lower output voltages required bycutting edge CPU, GPU and DDR memory designs.The internal MOSFET sensing achieves superior current sense accuracy vs. best-in-class controller-based InductorDCR sense methods.Protection includes IC temperature reporting and over temperature protection feature (OTP with thermalshutdown), cycle-by-cycle over current protection (OCP), control MOSFET short detection (HSS - High side shortdetection), VDRV and bootstrap under-voltage protection. The TDA21590 also features "refreshing" of bootstrapcapacitor to prevent the bootstrap capacitor from over-discharging.Operation of up to 1.5 MHz switching frequency enables high performance transient response, allowingminiaturization of output inductors, as well as input and output capacitors while maintaining industry leadingefficiency.


Features:

• Integrated driver, active diode, control MOSFET Q1 and synchronous MOSFET Q2

• On-chip MOSFET Current sensing and reporting at 5 µA/A.

• Input voltage (VIN) range of 4.25 V to 16 V

• VCC and VDRV supply of 4.25 V to 5.5 V

• Output voltage range from 0.225 V up to 5.5 V at VIN = 12 V

• Output current capability of 90 A

• Operation up to 1.5 MHz

• Enhanced Fault reporting and identification

• VDRV under voltage lockout (UVLO)

• Bootstrap under-voltage protection

• 8mV / °C temperature analog output

• Over temperature protection and thermal shutdown

• Cycle-by-cycle over current Protection (OCP) and flag

• Control MOSFET short (HSS) detection and flag

• Auto-replenishment on bootstrap capacitor

• Compatible with 3.3 V tri-state PWM Input

• Body-Braking™ load transient support

• DEEP SLEEP mode for power saving via EN= low (32 µA typ)

• Small 5 mm x 6 mm x 0.9 mm PQFN package

• Lead free RoHS compliant package


How to Order

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