Functional description:

The FM25V20A is a 2-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectricrandom access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It providesreliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliabilityproblems caused by serial flash, EEPROM, and other nonvolatile memories.Unlike serial flash and EEPROM, the FM25V20A performs write operations at bus speed. No write delays areincurred. Data is written to the memory array immediately after each byte is successfully transferred to thedevice. The next bus cycle can commence without the need for data polling. In addition, the product offerssubstantial write endurance compared with other nonvolatile memories. The FM25V20A is capable of supporting1014 read/write cycles, or 100 million times more write cycles than EEPROM.These capabilities make the FM25V20A ideal for nonvolatile memory applications, requiring frequent or rapidwrites. Examples range from data collection, where the number of write cycles may be critical, to demandingindustrial controls where the long write time of serial flash or EEPROM can cause data loss.The FM25V20A provides substantial benefits to users of serial EEPROM or flash as a hardware drop-inreplacement. The FM25V20A uses the high-speed SPI bus, which enhances the high-speed write capability ofF-RAM technology. The device incorporates a read-only Device ID that allows the host to determine themanufacturer, product density, and product revision. The device specifications are guaranteed over an industrialtemperature range of –40°C to +85°C.

Features:

• 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8

- High-endurance 100 trillion (1014) read/writes

- 151-year data retention (See “Data retention and endurance” on page 20)

- NoDelay™ writes

- Advanced high-reliability ferroelectric process

• Very fast SPI- Up to 40-MHz frequency

- Direct hardware replacement for serial flash and EEPROM

- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

• Sophisticated write protection scheme

- Hardware protection using the Write Protect (WP) pin

- Software protection using Write Disable instruction

- Software block protection for 1/4, 1/2, or entire array

• Device ID

- Manufacturer ID and Product ID

• Low power consumption

- 800 µA active current at 1 MHz

- 100 µA (typ) standby current

- 3 µA sleep mode current

• Low-voltage operation: VDD = 2.0 V to 3.6 V

• Industrial temperature: –40°C to +85°C

• Packages

- 8-pin small outline integrated circuit (SOIC) package

- 8-pin dual flat no leads (DFN) package

• Restriction of hazardous substances (RoHS) compliant