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Nexperia PBRN123YT STOCK

NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package. The PBRN123YT from Nexperia is a high-quality PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It provides reliable performance in low to medium current circuits, featuring low saturation voltage and fast switching characteristics. The transistor is suitable for use in audio amplification, signal processing, and general electronic circuits. Its compact package ensures easy integration into various electronic designs, delivering consistent performance and stability across a wide range of operating conditions.

General description:

NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package. 

Features and benefits:

• 600 mA output current capability

• Low collector-emitter saturation voltage VCEsat

• High current gain hFE

• Reduces component count

• Built-in bias resistors

• Reduces pick and place costs

• Simplifies circuit design

• ± 10 % resistor ratio tolerance. 

Applications:

• Digital application in automotive and industrial segments

• Switching loads

• Medium current peripheral driver


How to Order

You can get your Nexperia PBRN123YT STOCK solution by flling out the form below and we will contact you immediately.

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