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General description:
NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package.
Features and benefits:
• 600 mA output current capability
• Low collector-emitter saturation voltage VCEsat
• High current gain hFE
• Reduces component count
• Built-in bias resistors
• Reduces pick and place costs
• Simplifies circuit design
• ± 10 % resistor ratio tolerance.
Applications:
• Digital application in automotive and industrial segments
• Switching loads
• Medium current peripheral driver
You can get your Nexperia PBRN123YT STOCK solution by flling out the form below and we will contact you immediately.
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