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General Description:
This P-Channel MOSFET is produced using ONSemiconductor’s advanced PowerTrench® process thathas been especially tailored to minimize the on-stateresistance.This device is well suited for Power Management andload switching applications common in NotebookComputers and Portable Battery Packs.
Features:
• –20 A, –30 V. RDS(ON) = 4.6 mΩ @ VGS = –10 VRDS(ON) = 6.5 mΩ @ VGS = –4.5 V
• Extended VGSS range (–25V) for battery applications
• HBM ESD protection level of 8kV typical (note 3)
• High performance trench technology for extremelylow RDS(ON)
• High power and current handling capability
• Termination is Lead-free and RoHS Compliant
You can get your onsemi FDS6681Z STOCK solution by flling out the form below and we will contact you immediately.
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