This PNP bipolar junction transistor (BJT) is a high-current, low-saturation device designed for demanding power switching and driving applications. With a continuous collector current rating of –1.5A and peak pulse current up to –4A, it delivers robust performance with a very low saturation voltage of less than –220mV at –1A, equivalent to an on-resistance (RCE(SAT)) of 163mΩ. The device offers 625mW power dissipation and characterized hFE up to –3A for excellent current gain hold-up. It is fully AEC-Q101 qualified, ensuring high reliability for automotive and industrial applications. The complementary NPN type (FMMT619) simplifies push-pull and half-bridge designs. Housed in a compact SOT23 package with "Green" molded compound, this device is RoHS compliant, halogen-free, antimony-free, and PPAP capable, making it ideal for space-constrained, environmentally conscious designs.