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TI TPS22860DBVR STOCK

The TPS22968 is a small, ultra-low-leakage-current, single-channel load switch. It requires a VBIAS voltage and operates with an input voltage range from 0 V to VBIAS, supporting a maximum continuous current of 200 mA. The switch is controlled by an on/off input (ON) that can interface directly with low-voltage control signals. It features ultra-low leakage current, with VIN leakage current of 2 nA and VBIAS leakage current of 10 nA at 5.5 V. The on-resistance (RON) is 0.73 Ω at VIN = 5 V (VBIAS = 5 V), 0.68 Ω at VIN = 3.3 V (VBIAS = 5 V), and 0.63 Ω at VIN = 1.8 V (VBIAS = 5 V). The device is available in space-saving 6-pin SOT-23 and SC70 small packages, is rated for operation over an ambient temperature range of –40°C to 85°C under natural ventilation, and offers ESD performance tested per JESD22 with 2-kV human body model (HBM) and 1-kV charged device model (CDM) ratings.

Description:

The TPS22968 is a small, ultra-low-leakage-current, single-channel load switch. The device requires a VBIAS voltage and operates with an input voltage range from 0 V to VBIAS. It can support a maximum continuous current of 200 mA. This switch can be controlled by an on/off input (ON), which can interface directly with low-voltage control signals. The TPS22860 is available in two space-saving 6-pin SOT-23 and SC70 small packages. The device is rated for operation over an ambient temperature range of –40°C to 85°C under natural ventilation.


Features:


Integrated single-channel load switch input voltage range: 0 V to VBIAS


Bias voltage range (VBIAS): 1.65 V to 5.5 V


On-resistance (RON)


At VIN = 5 V (VBIAS = 5 V), RON = 0.73 Ω


At VIN = 3.3 V (VBIAS = 5 V), RON = 0.68 Ω


At VIN = 1.8 V (VBIAS = 5 V), RON = 0.63 Ω


200-mA maximum continuous switch current


Ultra-low leakage current


VIN leakage current = 2 nA


VBIAS leakage current (at 5.5 V) = 10 nA


6-pin small outline transistor (SOT)-23 package or SC70 package


Electrostatic discharge (ESD) performance tested per JESD22


2-kV human body model (HBM) and 1-kV charged device model (CDM)


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