Description:

The UCC21222-Q1 device is an isolated dual-channel gate driver with programmable dead time and a wide temperature range. The device exhibits consistent performance and stability under extreme temperature conditions. It features 4-A peak source and 6-A peak sink current to drive power MOSFETs, IGBTs, and GaN transistors. The UCC21222-Q1 can be configured as two low-side drivers, two high-side drivers, or one half-bridge driver. The device's 5-ns delay matching allows two outputs to be paralleled to double drive strength under heavy-load conditions without internal shoot-through risk. The input side is isolated from the two output drivers by a 3.0-kVRMS isolation barrier, with a minimum common-mode transient immunity (CMTI) of 125 V/ns. Resistor-programmable dead time helps adjust system-limited dead time, improving efficiency and preventing output overlap. Additional protection features include: a disable function that turns off both outputs simultaneously when DIS is set high; an integrated glitch filter that rejects input transients shorter than 5 ns; and 200-ns negative voltage handling of up to –2 V on input and output pins. All supplies have UVLO protection.

Features:

Universal: dual low-side, dual high-side, or half-bridge driver

AEC-Q100 qualified with the following features:

Device temperature grade 1

Device HBM ESD classification level H2

Device CDM ESD classification level C4B

Junction temperature range: –40°C to 150°C

4-A peak source and 6-A peak sink output

Common-mode transient immunity (CMTI) greater than 125 V/ns

VDD output drive supply up to 25 V

8-V VDD UVLO

Switching parameters:

33-ns typical propagation delay

5-ns maximum pulse width distortion

10-µs maximum VDD power-up delay

UVLO protection for all supplies

Fast disable for supply sequencing

Applications:

HEV and EV battery chargers

Isolated converters in AC/DC and DC/DC power supplies

Motor drives and inverters