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TI UCC27517ADBVR STOCK

The UCC27517A is a single-channel, high-speed, low-side gate driver device that can effectively drive MOSFET and IGBT power switches. By using a design that inherently minimizes shoot-through current, the UCC27517A can source and sink high peak-current pulses into a capacitive load, providing rail-to-rail driving capability and extremely small propagation delay (13 ns typical). The device can handle –5 V on the input and provides 4-A source and 4-A sink (symmetric drive) peak drive current capability at VDD = 12 V. It is designed to operate over a wide VDD range of 4.5 V to 18 V and a wide temperature range of –40°C to +140°C, and the internal undervoltage lockout (UVLO) circuit on the VDD pin keeps the output low outside the VDD operating range to ensure glitch-free operation during power-up and power-down. The device features TTL- and CMOS-compatible logic thresholds independent of the supply voltage, hysteretic logic thresholds for high immunity, and a dual-input design that allows

Description:

The UCC27517A single-channel, high-speed, low-side gate driver device can effectively drive metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs) power switches. By using a design that inherently minimizes shoot-through current, the UCC27517A can source and sink high peak-current pulses into a capacitive load, which provides rail-to-rail driving capability and extremely small propagation delay (13 ns typical).

The UCC27517A device can handle –5 V on the input. The UCC27517A provides 4-A source and 4-A sink (symmetric drive) peak drive current capability at VDD = 12 V. The UCC27517A is designed to operate over a wide VDD range of 4.5 V to 18 V and a wide temperature range of –40°C to 140°C. The internal undervoltage lockout (UVLO) circuit on the VDD pin keeps the output low outside the VDD operating range. The ability to operate at low voltage levels such as below 5 V, together with the best-in-class switching characteristics, makes this device well suited for driving newly released wide-bandgap power switching devices such as GaN power semiconductor devices.

Features:

• Low-cost gate driver device, an excellent replacement for NPN and PNP discrete solutions

• 4-A peak source and sink symmetric drive

• Able to handle negative voltage (–5 V) on the input

• Fast propagation delay (13 ns typical)

• Fast rise and fall times (9 ns and 7 ns typical)

• 4.5-V to 18-V single supply

• Output held low during VDD undervoltage lockout (UVLO) (to ensure glitch-free operation during power-up and power-down)

• TTL- and CMOS-compatible logic thresholds (independent of supply voltage)

• Hysteretic logic thresholds for high immunity

• Dual-input design (select an inverting (IN– pin) or non-inverting (IN+ pin) driver configuration)

– Unused input pin can be used for enable or disable function

• Output held low when input pins are floating

• Absolute maximum voltage level of input pins not limited by the VDD pin bias supply voltage

• –40°C to +140°C operating temperature range

• 5-pin DBV (SOT-23) package option

Applications:

• Switched-mode power supply DC-to-DC converters

• DC-to-DC converters

• Companion gate driver device for digital power controllers

• Solar, motor control, uninterruptible power supplies (UPS)

• Gate driver for newly released wide-bandgap power devices (such as GaN)


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