Overview：

The LMG1210 is a 200V half-bridge MOSFET and GaN FET driver developed for applications requiring very high frequency and high efficiency. It features an adjustable dead-time function, extremely short propagation delay, and 3.4 ns high-side/low-side matching to optimize system efficiency. The device also includes an internal LDO that ensures a 5V gate-drive voltage independent of the supply voltage. To achieve optimal performance across a wide range of applications, the LMG1210 allows designers to select the best bootstrap diode for charging the high-side bootstrap capacitor. When the low side is not conducting, an internal switch turns off the bootstrap diode to effectively prevent high-side bootstrap overcharging and minimize reverse recovery charge. Additional parasitic capacitance on the GaN FET is minimized to less than 1 pF to reduce extra switching losses. The LMG1210 offers two control input modes: Independent Input Mode (IIM) and PWM Mode. In IIM, each output is independently controlled by a dedicated input. In PWM Mode, two complementary output signals are generated from a single input, with user-adjustable dead time from 0 ns to 20 ns per edge. The LMG1210 operates over a wide temperature range of –40°C to 125°C and is available in a low-inductance WQFN package.

Features：

Operating frequency up to 50 MHz

10 ns typical propagation delay

3.4 ns high-side-to-low-side matching

4 ns minimum pulse width

Two control input options:

Single PWM input with adjustable dead time

Independent Input Mode (IIM)

1.5 A peak source current and 3 A peak sink current

External bootstrap diode for flexibility

Internal LDO for supply rail adaptability

High 300 V/ns CMTI

Less than 1 pF capacitance from HO to LO

UVLO and over-temperature protection

Low-inductance WQFN package

Applications：

High-speed DC/DC converters

RF envelope tracking

Class-D audio amplifiers

Class-E wireless charging

High-precision motor control